Abstract
Energy terms, dipole oscillator strengths and photoionization cross-sections from the ground state have been calculated for doubly-ionized silicon. Energies of the autoionizing 1 P 0 states and resonance line widths in the continuum are also obtained. The configuration interaction method was used for initial and final states. The ionic orbitals were generated through angular-momentum-dependent, scaled Thomas-Fermi-Dirac-Amaldi potentials.
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