Abstract
The absorption properties of GaAsBi have been investigated using GaAsBi based p–i–n diodes with different bismuth compositions (∼2.1 and ∼3.4%). The absorption behaviour of GaAsBi as a function of incident photon energy above the band gap follows that of a direct band gap material. With increasing bismuth content, the absorption of photons with energy lower than the band gap in GaAsBi is enhanced, probably due to localized states caused by Bi-related defects. A simplified analysis has been undertaken on the behaviour of absorption as a function of bias voltage. By undertaking photoresponsivity measurements as a function of reverse bias, the background doping type and the minority carriers diffusion lengths in GaAsBi have been determined.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
