Abstract
We present the results of a theory describing the saturation behavior of p-type semiconductors, such as Si, with small spin-orbit splittings by high intensity light with a wavelength near 10 μm. We consider absorption due to direct intervalence-band transitions between the heavy-hole and light-hole, heavy-hole and split-off, and light-hole and split-off bands. The functional form for the saturation of each transition is given and values for the saturation intensity as a function of photon energy and temperature are reported.
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