Abstract
In order to study the thermodynamical stability of a crystalline overlayer on a quasicrystalline surface, thin Al films are deposited on the five- and three-fold-symmetry surface of the Al 70Pd 20Mn 10 quasicrystal. Subsequently, the decrease of the film thickness is monitored as a function of time at different substrate temperatures using Auger electron spectroscopy. We find that diffusion of Al into the substrate is negligible below roughly 280 K and 300 K for the two investigated surfaces, respectively. For higher temperatures, Arrhenius parameters are extracted from the diffusion data which suggest that Al absorption is mediated by a fast vacancy-diffusion process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
