Abstract
Cross-shaped silicon-doped arrays are proposed for ultra-broadband absorber in the terahertz region, which consists of periodic Si/SiO2 microstructure. The cross-shaped silicon-doped absorber has a maximum absorption of over 99.9% and a relative bandwidth for absorption over 95% is 147% (0.96–6.24 THz). In this work, the absorber has better absorption bandwidth, center frequency, and relative bandwidth ratio than the various reference absorbers. The physical mechanism of the structure to achieve broadband absorption is explained by studying the electric field distribution. Furthermore, the ultra-broadband absorption characteristics of the absorber is demonstrated well by impedance matching theory. Finally, the effects of polarization angle, incident angle, angular rotation, and structural parameters on the absorption performance of the target structure are analyzed in detail, demonstrating that the structure has properties such as polarization-independent, wide-angle absorption and good process tolerance.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
