Abstract
A dynamically tunable terahertz broadband absorber based on the metamaterial structure of vanadium dioxide (VO2) is proposed and analyzed. The absorber consists of two patterned VO2 layers and a metal bottom layer separated by two polytetrafluoroethylene (PTFE) dielectric layers. Simulation results show that the absorption exceeds 90% in the frequency range of 2.4–11 THz with a relative bandwidth of 128.4% under normal incidence. When VO2 is in the metal phase, the designed absorber functions as an ideal absorber. The absorption rate can be flexibly adjusted from 2% to 99% as vanadium dioxide transitions from the insulator phase to the metal phase. Therefore, the newly developed broad structure has the capability to seamlessly transition between functioning as an absorber or reflector through modifications in the conductivity of VO2 from the insulator phase to the metal phase. Moreover, further insight into the underlying physical processes can be gained by studying the insensitivity of the proposed absorber to the polarization of incident light and its ability to achieve high absorption across a wide range of incident angles. Impedance matching theory and electric field distribution of the absorber are investigated. The THz absorber has many potential applications in fields such as THz sensors, modulation, and switches.
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