Abstract
The optical properties of a hybrid material consisting of semiconductor quantum dots and metallic nanoparticles are investigated. A semiconductor structure containing a stack of five layers of indium arsenide quantum dots near the surface of gallium arsenide is fabricated using molecular beam epitaxy. The surface of the structure is covered by a layer of silver nanoparticles, whose plasmon resonances are close to exciton transitions in quantum dots. The redshift of the extinction spectrum of the quantum dots and enhancement of photoluminescence are observed, indicating the interaction between the resonances in the components of the hybrid system formed here.
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