Abstract
AbstractThe electrical conductivity σ of CaMoO4 crystals was investigated between room temperature and 850°C. The mobility vv and the diffusion coefficient Dv of the O− ion vacancies have been derived from σ: vvT = 3300 exp (−1.52 eV/kT) cm2 K/Vs, Dv = (0.1…1) × exp (−1.52 eV/kT) cm2/s. An absorption occuring in crystals which are reduced or X‐irradiated at low temperatures is dichroitic and caused by Mo5+ ions. For measurement in c direction the oscillator strength of the 680 nm absorption band is found to be about 0.1.
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