Abstract
We report on the absolute quantum photoyield (QPY) measurements from defective diamond surfaces in the 140–200 nm spectral range. The effect of defects on the photoemission properties of polycrystalline diamond films is studied by intentionally introducing damage using room temperature 30 keV Xe+ ion bombardment at doses ranging from 2×1013 to 2×1015 ions/cm2. Ion bombardment results in a drastic degradation of the QPY, to less than 1% at 140 nm, even at the lowest implantation dose, compared to ∼11.5% measured for the unimplanted diamond film. The decrease in QPY is associated with a change of the electron affinity from negative to positive as determined by secondary electron emission measurements. Microwave hydrogen plasma treatment of the damaged diamond films results in complete regeneration of the photoemission properties for diamond films implanted to Xe+ doses up to 2×1014 ions/cm2; however, only partial recovery is obtained for films irradiated with higher ion dose.
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