Absolute oscillator strengths for photoabsorption, photoionization and ionic photofragmentation of silane. II. The Si 2p and 2s inner shells

Abstract

Absolute photoabsorption oscillator strengths (cross sections) for the Si 2p and 2s inner shells of silane have been obtained using dipole (e, e) spectroscopy in the equivalent photon energy range 90–180 eV. Photoionization time-of-flight (TOF) mass spectra have been collected using dipole (e, e+ion) coincidence spectroscopy at 103 and 120 eV in the Si 2p resonance excitation and continuum ionization regions respectively. Combination of the photoabsorption oscillator strengths with the photoionization efficiency and the ionic photofragmentation branching ratios determined from the mass spectra yielded absolute photoion oscillator strengths for dissociative photoionization channels at these energies. The photoabsorption and photoionizaton results are compared with previously published experimental and theoretical work on gaseous silane, free Si atoms and solid Si.