Abstract
Absolute intensity measurement of the CTR scattering from a Si(1 1 1) wafer of which the surface was mechanochemically treated was carried out by a technique of using an imaging plate detector in conjunction with a synchrotron radiation source [T. Shimura and J. Harada, J. Appl. Cryst. 26 (1993) 151]. Observation showed an excellent agreement with the prediction given by Kashihara et al. [Jpn. J. appl. Phys. 26 (1987) 1029] and Vlieg et al. [Surface Sci. 210 (1989) 301], suggesting that the approximation based on the kinematical diffraction theory is justified.
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