Abstract
AbstractSpatially resolved absolute electroluminescence (EL) imaging demonstrates the localized EL intensity and the uniformity of solar cells. Combined with two‐dimensional (2‐D) distributed circuit network modeling, detailed and important information that is contained in experimental data can be extracted for in‐depth understanding of solar cell performances. Herein, we measured the absolute EL images of three different solar cells (Si, GaAs, and Cu (In,Ga)Se2 (CIGS)) and observed the different injection‐current‐dependent EL intensities of the defect points (dark or bright) on the solar cells. The origins of these defects were attributed to different defect types according to our established 2‐D distributed equivalent circuit model. The results demonstrated that the combination of absolute EL imaging and distributed circuit modeling yielded accurate quantitative diagnoses of the electrical defects in solar cells.
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