Abstract
Accurate absolute dose measurements are still a challenge in plasma immersion ion implantation (PIII). Here, a contact-free method using a pyrometer and the sample as a thermal probe is presented. Good agreement between simulated temperature evolutions and measurements were obtained, allowing a direct determination of the incident ion flux. However, using the whole sample holder as the probe introduces errors due to lateral dose inhomogeneities and a finite thermal conductivity. Nevertheless, the accuracy is sufficient for tribological high dose applications. More demanding standards for semiconductor industry could be met using a small, thermally isolated patch in the center of the sample.
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