Abstract
Forward voltage-current characteristics for planar abrupt junction silicon and germanium diodes are presented. These curves, derived directly from the basic current and continuity equations, extend the knowledge of diode behavior from the low injection region continuously to the high injection region. They include the effects of conductivity modulation, ohmic drop, and electric fields in the base, but neglect space charge recombination currents. The presentation includes treatment of both infinite recombination and majority carrier base contacts. Band pictures for several cases are shown and discussed in terms of the various mechanisms influencing them.
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