Abstract
In the quantum system of Si nanowire (NW), the energy bandgap obviously increases with decreasing radius size of NW, in which the quantum confinement (QC) effect plays a main role. Furthermore, the simulation result demonstrated that the direct bandgap can be obtained as the NW diameter is smaller than 3 nm in Si NW with (001) direction. However, it is discovered in the simulating calculation that the QC effect disappears as the NW diameter arrives at size of monoatomic line, in which its bandgap sharply deceases where the abrupt change effect in bandgap energy occurs near the idea quantum wire. In the experiment, we fabricated the Si NW structure by using annealing and pulsed laser deposition methods, in which a novel way was used to control the radius size of Si NW by confining cylinder space of NW in nanolayer. It should have a good application on optic-electronic waveguide of silicon chip.
Highlights
Nanostructures, mainly involving nanoparticle, nanolayer and nanowire, have been studied intensively over the past decade [1,2,3,4,5]
Crystals 2020, 10, 340 size of monoatomic line, where its bandgap sharply deceases. This abrupt change effect in bandgap energy may be originated from transforming between different dimensions at the symmetry broken point, in which the quasi-1D shape of NW is transformed to the one dimensional quantum wire
In the quantum system of Si NW, we have investigated the situation near monoatomic line whose structures are shown in Figure 6, in which the radius decrease from the top picture to the bottom picture arriving monoatomic line structure
Summary
Nanostructures, mainly involving nanoparticle, nanolayer and nanowire, have been studied intensively over the past decade [1,2,3,4,5]. Crystals 2020, 10, 340 size of monoatomic line, where its bandgap sharply deceases This abrupt change effect in bandgap energy may be originated from transforming between different dimensions at the symmetry broken point, in which the quasi-1D shape of NW is transformed to the one dimensional quantum wire. Fabrication of Silicon Nanowire diameter reaches to size of monoatomic line, where its bandgap sharply deceases The preparing process of silicon NW involves two steps, at first a Si amorphous nanofilm was produced by using PLD method, subsequent high-temperature annealing of the substoichimetric film (typically 900~1100 °C) generated crystallizing of nanoclusters in the nanofilm and produced a phase separation between Si crystal and amorphous with the formation of Si nanoparticles, in which silicon NW was gradually generated with connecting nanoparticles by controlling
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