Abstract
We have studied the behavior of the electronic energy spin-splitting of InGaAs-InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 8x8 version of the Transfer Matrix Approach that consider contributions from abrupt interfaces and external fields when tunneling through central barrier exists. We have included the Land\'e g-factor dependence on the external applied field. Also, we have calculated electron density of states and photoluminescence excitation. Variations of the electron spin-splitting energy lead to marked peculiarities in the density of states. Because the density of states is directly related to photoluminescence excitation, these peculiarities are observable by this technique.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
