Abstract
Monocrystalline silicon is presently the most commonly used substrate material for the production of microelectronic components (microchips) worldwide. The machining of this material is critical to high quality standards. Abrasive processes such as ID cut-off grinding, surface grinding, lapping, polishing and dicing are applied to monocrystalline silicon and will be considered in this paper. With the development of new components (i.e. the 64 Mbit chip), the electronic industry now has higher standards for the total thickness variation (TTV) and the wafer warp (less than 1 μ m on a wafer with a diameter of 200 mm). New research work on abrasive technologies is discussed. For cutting a silicon bar into waters. grinding/slicing (GS) can replace ID cut-off grinding. In the field of surface finishing the competitive technologies of doublesided lapping grinding on a rotary table and grinding with a rotating wafer are applied. A comparison of doubleside and mechanochemical polishing is made. In addition, the results of several investigations into the material removal mechanisms and surface and subsurface measurements will be dealt with in the paper.
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