Abstract
A complete abrasive‐free process for fabricating copper damascene interconnection has been developed. The process is a combination of newly developed abrasive‐free polishing (AFP) of Cu and dry etching of a barrier metal layer. A new aqueous chemical polishing solution and a polyurethane polishing pad produce complete stop‐on‐barrier characteristics of Cu polishing. The AFP provides a very clean, scratch‐free, anticorrosive polished surface, and the total depth of erosion and dishing is reduced to less than one fifth of that produced by conventional slurries, even after 100% overpolishing. The barrier metal is successfully dry etched by using gas at a high selectivity ratio (more than 10) of barrier metal to . It was found that the developed AFP significantly reduces both Cu line resistance and its deviation. Moreover, AFP can also contribute to cost reduction of chemical mechanical polishing and help solve environmental problems related to waste slurries. © 2000 The Electrochemical Society. All rights reserved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
