Abstract
The $1/f$ noise expression is presented for the amorphous InGaZnO thin-film transistors (TFTs) at low drain voltage. Considering the mobility power-law parameter $\alpha $ in the TFTs, Ghibaudo’s carrier number fluctuation model with the series resistance noise is applied to obtain the analytical normalized drain current noise power spectral density expression. The expression is compared with the numerical calculation, and verified by the available experimental data.
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