Abstract
A model of radiative and nonradiative transitions in silicon quantum dots is presented that describes the temperature dependence of photoluminescence of ion-synthesized ensembles of Si nanocrystals in SiO2. The four−level scheme of transitions is considered taking into account thermally activated processes and exchange splitting of the ground state of excited exciton to triplet and singlet sublevels, transitions from which are responsible for the luminescence. The expression for temperature dependence of the monochromatic photoluminescence components that is in agreement with a number of analogous dependencies from literature is derived on the basis of solution of a system of kinetic equations. The obtained expression describes adequately experimental results of the given work and allows to determine the splitting value for the exciton state in dependence on the energy of emitted photons, i.e. the nanocrystal size.
Highlights
Научно−исследовательский физико−технический институт Нижегородского государственного университета имени Н
The dopant incorporation into the growing crystal is assumed to occur via both blocking dopant atoms at the kink positions by the host atoms and atomic exchange between dopant adatoms and atoms of the topmost crystalline layer
The supersaturation is partially reduced with appearance of 2D islands on the terraces and creation of kinks at the 2D island edges
Summary
М. Технология ферритовых материалов магнитоэлектроники / Л. V. Structure and magnetic properties of nanocrystalline SrFe12O19 alloy produced by highenergy ball milling and annealing / S. V. Structure and magnetic properties of strontium ferrite anisotropic powder with nanocrystalline structure / S. В. Программы для рентгеновского анализа поликристаллов / Е. А. Свиридова //Металловедение и термическая обработка металлов. Magnetic glassceramic containing fine ferrite crystals / L.
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