About extended defect formation in helium-implanted germanium

Abstract

Extended defects generated by helium implantation in germanium at temperatures up to 500 °C have been studied using transmission electron microscopy and X-ray diffraction. Extrinsic defects as well as bubbles do readily form at room temperature. The formation of both defects follows the same trend as what is observed in silicon with a shift toward the low temperatures. The damage penetration depth seems to be, however, dependent on both the orientation and the implantation temperature.