Abnormal increase of time of oxygen diffusion with oxidation of silicon surface under action of powerful laser pulses

Abstract

The paper presents an investigation of deformation response of monocrystalline silicon surface to the action of short laser pulses in the air and in vacuum P approximately equals 10<SUP>-2</SUP> Torr. An anomalously continuous change of the surface relief was identified on irradiation in the air. The observable phenomenon is explained by oxidation of surface layer, enriched with defects.