Abnormal drain current (ADC) effect and its mechanism in FD SOI MOSFETs

J.-G Yun,Hi-Deok Lee Hi-Deok Lee,D Flandre,M Bawedin,S Cristoloveanu

doi:10.1109/led.2005.862684

Abnormal drain current (ADC) effect and its mechanism in FD SOI MOSFETs

J.-G Yun, Hi-Deok Lee Hi-Deok Lee + Show 3 more

https://doi.org/10.1109/led.2005.862684

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Journal: IEEE Electron Device Letters	Publication Date: Feb 1, 2006
Citations: 15

Affiliation: Chungnam National University, Université Catholique de Louvain, Institut de Microélectronique, Electromagnétisme et Photonique

#Fully Depleted Silicon-on-insulator MOSFETs #Fully Depleted + Show 8 more

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Abstract

A new type of abnormal drain current (ADC) effect in fully depleted (FD) silicon-on-insulator (SOI) MOSFETs is reported. It is found that the drain current becomes abnormally large for specific front- and back-gate voltages. The drain current exhibits a transient effect due to the floating body behavior and no longer follows the conventional interface coupling theory for these specific front- and back-gate bias conditions. It is shown that the ADC can be generated by the combination of gate-induced drain leakage, transient effects, and parasitic bipolar transistor action in FD SOI MOSFETs.

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