Abstract
Silicon thin films are deposited by inductively coupled plasmachemical vapour deposition (ICP-CVD) at a low temperature of350°C using a mixture of SiH4 and H2. Thestructures of the films are characterized by x-ray diffraction andRaman spectra. Under the optimum experimental conditions, we observethat the crystallinity of Si films becomes more excellent and thepreferred orientation changes from (111) to (220) with the decreasingdilution of SiH4 in H2. Such an abnormalcrystallization is tentatively interpreted in term of the high density,low electron temperature and spatial confinement of the plasma in theprocess of ICP-CVD.
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