Abstract
This paper reports an abnormal coexistence of different resistive switching behaviors including unipolar (URS), bipolar (BRS), and threshold switching (TRS) in an Al/NiO/indium tin oxide (ITO) structure fabricated by chemical solution deposition. The switching behaviors have been strongly dependent on compliance current (CC) and switching processes. It shows reproducible URS and BRS after electroforming with low and high CC of 1 and 3 mA, respectively, which is contrary to previous reports. Furthermore, in the case of high-forming CC, TRS is observed after several switching cycles with a low-switching CC. Analysis of current-voltage relationship demonstrates that Poole-Frenkel conduction controlled by localized traps should be responsible for the resistance switching. The unique behaviors can be dominated by Joule heating filament mechanism in the dual-oxygen reservoir structure composed of Al/NiO interfacial layer and ITO. The tunable switching properties can render it flexible for device applications.
Highlights
Binary transition metal oxides like NiO, TiO2, and ZnO have attracted much attention in the field of resistive switching due to simple constituents, low deposition temperature, and compatibility with complementary metal-oxide semiconductor technology [1,2]
After the forming process, the device was transformed from initial high resistance state (HRS) to low resistance state (LRS), and conductive filaments were formed
By control forming and switching compliance current (CC), unipolar resistive switching (URS), bipolar resistive switching (BRS), and Threshold resistive switching (TRS) were found in the same Al/NiO/indium tin oxide (ITO) device
Summary
Binary transition metal oxides like NiO, TiO2, and ZnO have attracted much attention in the field of resistive switching due to simple constituents, low deposition temperature, and compatibility with complementary metal-oxide semiconductor technology [1,2]. Chiang et al have demonstrated that bipolar resistive switching (BRS) in Al/NiO/indium tin oxide (ITO) as Al/NiO interfacial reaction region combined with ITO can form a dual-oxygen reservoir structure [4]. The coexistence of different resistive switching behaviors has been found in many materials such as BiFeO3 [11,12], HfO2 [13,14], SrTiO3 [15], ZnO [16,17,18], diamond-like carbon [19], and TiO2 [20]. We present an abnormal coexistence of URS with a low CC and BRS under high CC in the same Al/NiO/ITO device. The Joule heating filament mechanism in a dual-oxygen reservoir structure composed of Al/NiO layer, and the ITO substrate was responsible for the abnormal resistance switching
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