Abstract
We have investigated microscopic distributions of the electric-field-induced stress components for diamond/$c\text{\ensuremath{-}}\mathrm{B}\mathrm{N}$ (110) superlattices with ab initio calculations. At zero electric field, tensile and compressive stresses exist for the diamond and BN layers, respectively, in the plane perpendicular to the stacking direction. Applying a static electric field, forces act on the B and N atoms and an apparent shear stress field appears in the BN layers. With atomic position relaxed, the shear stress extends to the whole region.
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