Abstract

By means of ab initio total energy calculations, we have investigated the structure and properties of Sb 2Se x Te 3− x ( x = 0, 1, 2) alloys, a family of phase change materials for data storage. On the basis of analyzing the chemical bonding and electronic properties of Sb 2Se x Te 3− x ( x = 1, 2) and Sb 2Te 3 alloys, we have shown that the crystalline-to-amorphous transition of Sb 2Se 2Te may be faster than that of Sb 2Te 3. Furthermore, the substitution of Te by Se in Sb 2Te 3 can increases the electric resistance of Sb 2Se x Te 3− x ( x = 1, 2) alloys and hence may lower the reset power consumption.

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