Abstract
Germanium is a promising material for next-generation electronic and photonic devices, and engineering ohmic contacts to it can be expected to be a key challenge therein. The sensitivity of the Schottky barrier height of the NiGe/Ge contact to the detailed interfacial structure is revealed using the ab-initio study of pseudo-epitaxial NiGe(001)/Ge(100) contact using the computationally efficient meta-generalized-gradient-approximation, which can overcome the well-known bandgap underestimation problem. The p-type Schottky barrier height for an atomically flat pseudo-epitaxial NiGe(001)/Ge(100) contact is calculated to be 260 meV, an overestimate of about 160 meV compared to experiments. However, the estimated modulation of this barrier height, by about 270 meV, due to interface morphology points to a possible explanation for this discrepancy and suggests ways to engineer the contact for lesser resistivity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
