Abstract
We investigated the electronic and magnetic properties for a diluted magnetic semiconductor of 3d‐metal Mn‐doped AlGaP2 chalcopyrite alloys by using the first‐principle calculations. The chalcopyrite AlGaP2 has the semiconductor characters. The ferromagnetism with high magnetic moment of Mn is originated from the 3d(Mn)‐ and 3p(P)‐bands exchange couplings. When the singlet Ga or Al vacancy, or the mixed vacancies including P vacancy exists in the chalcopyrite AlGaP2:Mn, the high magnetic moment of Mn exhibits because the exchange interactions between the localized carrier trapped by vacancy and neighboring Mn2+ ions aligned by the Mn2+ spins around the carrier localization center. The AlGaP2:Mn without the defects exhibits the ferromagnetic and half‐metallic state. However, the ferromagnetic half‐metallicity disappears in the singlet vacancy and the mixed vacancies, such as Al+Ga, Al+P, or Ga+P. These electronic and magnetic properties were compared with that of AlGaP2:Mn thin film.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
