Ab initio studies of single-height Si(001) steps

Abstract

We have studied the Si(001) surface with single-height steps by ab initio molecular dynamics simulations. Surface dimers were found to be unstable with respect to buckling for all geometries considered. However, the ground state reconstruction depends on the type of step. For the SA step, the c(2 × 4) geometry is induced by the step edge, while, for the SB step, the p(2 × 2) reconstruction is more stable. The binding sites and diffusion barriers for a single Si adatom were investigated via the adiabatic trajectory method. In agreement with other studies of the flat surface, fast diffusion takes place along the dimer rows. The local changes to buckling induced by the adatom are sizable and lead to changes in the activation barriers for diffusion, in particular for the path perpendicular to the dimer rows. We also investigated the diffusion of the adatom over the rebonded SB step. The calculations show that there is no additional barrier for the arrival of the adatom at the edge from the upper terrace, while a barrier of at least 1 eV exists for the arrival of the adatom from the lower edge. In step flow growth involving the rebonded SB step, most of the adatoms will thus arrive from the upper terrace.