Ab initio structure of 3p4p in Si I

Abstract

Multiconfiguration calculations have been performed in order to estimate ab initio energies for the configuration 3p4p in Si I. A preliminary attempt has also been made to calculate E2 transition rates for transitions from levels of 3p2 to those of 3p4p. However, these rates show a gauge dependence, which indicates that further correlation needs to be included to obtain accurate rates and lifetimes.