Ab initio simulation of resonant forbidden reflections in Ge crystals

Abstract

Forbidden reflections are observed in the case of diffraction of synchrotron radiation with wave-lengths close to the absorption edges in crystals. A new method for calculating the intensity of thermal-motion-induced (TMI) forbidden reflections is proposed in this paper. It includes two stages: simulation of instantaneous thermal atomic displacements using ab initio molecular dynamics and subsequent quantum-mechanical calculations of the resonance scattering amplitude for various configurations. This procedure is used to calculate the temperature dependence of the 600 reflection intensity for Ge. The proposed method for simulating forbidden TMI reflections is suitable for any crystal structures and can explain many results so far obtained using synchrotron.