Abstract

Since there are still research interests in the physical properties of quasi-binary thermoelectric {hbox {Mg}}_{2} {hbox {X}}_{1-x}{hbox {Y}}_{x} alloys, with X, Y = Si, Ge, Sn, we present an ab initio analysis that yields the relative formation energy and effective masses of the conduction bands, in the whole compositional range x. We base our calculations on the full-relativistic Korringa, Kohn and Rostocker (KKR) Green’s functions formalism within the coherent potential approximation (CPA). Formation energies, measured relative to the end {hbox {Mg}}_{2} hbox {X} compounds, show no excess energy for the {hbox {Mg}}_{2} hbox {Si} {-} {hbox {Mg}}_{2} hbox {Ge} substitution thus indicating a complete solubility. In contrast, concave and asymmetric formation energies for intermediate compositions in the {hbox {Mg}}_{2} hbox {X} {-} {hbox {Mg}}_{2} hbox {Sn} alloys manifest a miscibility gap. With this basis, we compute and discuss the crossing of the conduction bands observed in n-type {hbox {Mg}}_{2} {hbox {X}}_{1-x} {hbox {Sn}}_x materials. We present direction- and band-dependent effective masses using a generalized single parabolic band effective mass approximation to discuss anisotropic effects, to interpret available experimental and theoretical data, and to predict intermediate and not yet published transport parameters on these alloys.

Highlights

  • Mg2X1−x Yx alloys, with X,Y = Si, Ge, Sn, we present an ab initio analysis that yields the relative formation energy and effective masses of the conduction bands, in the whole compositional range x

  • We base our calculations on the full-relativistic Korringa, Kohn and Rostocker (KKR) Green’s functions formalism within the coherent potential approximation (CPA)

  • The thermoelectric performance of Mg2Si has shown to be substantially improved when Si is replaced by Sn due to an enrichment of its electronic density of states (DOS)— its power factor (PF)—and other induced detrimental effects on its phonons contribution to thermal ­transport[14]

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Summary

Introduction

Mg2X1−x Yx alloys, with X,Y = Si, Ge, Sn, we present an ab initio analysis that yields the relative formation energy and effective masses of the conduction bands, in the whole compositional range x. Concave and asymmetric formation energies for intermediate compositions in the Mg2X−Mg2Sn alloys manifest a miscibility gap. With this basis, we compute and discuss the crossing of the conduction bands observed in n-type Mg2X1−x Snx materials. Along standing theoretical and experimental record of research has been presented, mostly concentrated in Mg2X crystals and Mg2Si1−xSnx alloys, and their fundamental properties are not yet completely u­ nderstood[15,16,17,18,19,20]. No complete and stable solubility has been d­ emonstrated[1]

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