Abstract
Cu3N has been grown on m-Al2O3 by aerosol-assisted chemical vapor deposition using 0.1 M CuCl2 in CH3CH2OH under an excess of NH3 at 600 °C, which led to the deposition of Cu that was subsequently converted into Cu3N under NH3: O2 at 400 °C in a two-step process without exposure to the ambient. The reaction of CuCl2 with an excess of NH3 did not lead to the growth of Cu3N, which is different to the case of halide vapor phase epitaxy of III-V semiconductors. The Cu3N layers obtained in this way had an anti-ReO3 cubic crystal structure with a lattice constant of 3.8 Å and were found to be persistently n-type, with a room temperature carrier density of n = 2 × 1016 cm-3 and mobility of µn = 32 cm2/Vs. The surface depletion, calculated in the effective mass approximation, was found to extend over ~0.15 µm by considering a surface barrier height of ϕB = 0.4 eV related to the formation of native Cu2O.
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