Abstract
This manuscript presents the design of a low phase noise, high figure of merit (FoM) single-ended octagonal ring oscillator (RO). The proposed RO employs the pulse injection (PI) technique for performance enhancement. The PI technique is used for suppression of phase noise and spurious harmonics. Besides, a novel voltage dependent phase shifter is employed. The proposed RO has an output signal with voltage controlled phase. Different output signal phases can be obtained employing different selected voltages to control the output signal phase. The proposed injection locked ring oscillator (ILRO) represents a suitable implementation for phase shift keying. The proposed ILRO has a measured oscillation frequency of 4.9 GHz with a fine tuning range of 500 MHz. It has a measured phase noise of −126.17 dBc/Hz @ 1MHz offset while consuming only 4.8 mW of DC power. The proposed ILRO has a FoM of −193.17 dBc/Hz. This RO has been designed and implemented in 0.18 µm CMOS technology. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1760–1762, 2016
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