A ZTO-based memristor with tunable synaptic plasticity

Abstract

It is an inevitable trend to use artificial neural networks based on neurons and synapses to deal with the bottleneck of von Neumann architectures, and memristor is one of the most potential artificial synapses. Here, Zinc oxide doped tin (ZTO), as a resistive material of memristor with a planar structure of Cu/ZTO/FTO, was prepared using sol-gel and spin-coating methods. Such devices exhibit stable resistive transition within scanning voltage 4 V. In particular, the device shows adjustable synaptic plasticity simulations, including the alternation between habituation and sensitization, which can be regulated by amplitude, rest time of stimulus pulse and the number of positive and negative pulse. Such remarkable plasticity performance of memristor based on ZTO might have promising applications for artificial synapse devices.