A zero-mask one-time programmable memory array for RFID applications

Abstract

A CMOS-compatible one-time programmable (OTP) memory array for RFID applications is presented. Three zero-mask antifuse (AF) devices were evaluated on their feasibility for RFID applications. Among the AFs, the gate oxide AF device can be programmed using only 7 /spl mu/W of peak power and was chosen to form the RFID memory array. A memory array architecture is presented based on a compact 2-transistor cell, together with a programming circuit that does not require special high voltage transistors and consumes zero DC current during programming. The device structures were fabricated in 0.18 /spl mu/m process and were experimentally verified, while circuit simulations were performed using TSMC 0.18 /spl mu/m model on Cadence Analog Artist.