A WORM type polymer electrical memory based on polyethersulfone with carbazole derivatives

Abstract

A series of high-performance polyethersulfone, which had pendent carbazole moieties (Cz-PES 1–3), have been designed and successfully synthesized for an application in a write-once read-many type memory device as the active polymer layer. The memory performance can be tuned by changing the substituent in the Cz derivatives units. Cz-PES 3 with excellent thermal properties ( Tg = 185°C and Td = 378°C) exhibits the best memory performance. For Cz-PES 3-based device indium tin oxide/Cz-PES 3/aluminum, the turn-on voltage is 2.5 V and the ON/OFF current ratio is higher than 106. Moreover, the data can be maintained for longer than 3 × 105 s once written and can be read for more than 450 cycles under a reading voltage of 1.0 V at ambient conditions. Thus Cz-PES 3 can serve as an excellent memory material in the data storage field of next generation.