Abstract
When integrating an integrated circuit (IC) chip with a substrate integrated waveguide (SIW), the usual practice is first to convert the SIW to a microstrip, and then make wire bonding between the IC Chip and the microstrip. Consequently, the transition between the SIW and microstrip will enlarge the circuit size and introduce extra loss. In this letter, a novel wire bonding structure directly between the SIW and IC Chip is proposed, which not only reduced the circuit size and loss but also weakened the sensitivity etc. Two W-band low noise amplifier (LNA) prototypes are designed and fabricated with and without SIW-to-Microstrip transitions, respectively. Compared with the microstrip wire bonding structure, the direct SIW wire bonding structure efficiently reduced the circuit size and improved the performance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
