Abstract

A new Wiener-type dynamic neural network (DNN) approach for nonlinear device modeling is proposed in this paper. The proposed analytical formulation of Wiener-type DNN structure consists of a cascade of a simplified linear dynamic part and a nonlinear static part. The simplified linear dynamic equations are obtained by vector fitting enhancing the efficiency of the model. A new formulation and new sensitivity analysis technique is derived to train the proposed Wiener-type DNN with dc, small- and large-signal data. A new gradient-based training algorithm is also formulated to speed up the training of proposed Wiener-type DNN model. The proposed Wiener-type DNN model can be trained to be accurate relative to device data. Furthermore, the proposed Wiener-type DNN provides enhanced convergence properties over existing neural network approaches such as time delay neural network (TDNN) and TDNN with extrapolation. Application examples on modeling GaAs metal-semiconductor-field-effect transistor, GaAs high-electron mobility transistor (HEMT), and a real <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2 \times 50$ </tex-math></inline-formula> gatewidth GaAs pseudomorphic HEMT are presented. The use of Wiener-type DNN model in harmonic balance simulations demonstrates that the Wiener-type DNN is a robust method for developing models for different types of microwave devices. These models could be implemented into circuit simulators conveniently.

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