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Abstract
This paper presents a wideband low-noise amplifier (LNA) front-end with noise and distortion cancellation for high-frequency ultrasound transducers. The LNA employs a resistive shunt-feedback structure with a feedforward noise-canceling technique to accomplish both wideband impedance matching and low noise performance. A complementary CMOS topology was also developed to cancel out the second-order harmonic distortion and enhance the amplifier linearity. A high-frequency ultrasound (HFUS) and photoacoustic (PA) imaging front-end, including the proposed LNA and a variable gain amplifier (VGA), was designed and fabricated in a 180 nm CMOS process. At 80 MHz, the front-end achieves an input-referred noise density of 1.36 nV/sqrt (Hz), an input return loss (S11) of better than −16 dB, a voltage gain of 37 dB, and a total harmonic distortion (THD) of −55 dBc while dissipating a power of 37 mW, leading to a noise efficiency factor (NEF) of 2.66.
Highlights
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The electrical signals are processed by the ultrasonic imaging receiver, in which the low-noise amplifier (LNA)
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Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. With the recent advancements of high-frequency (>30 MHz) ultrasound transducers [1], such as polyvinylidene fluoride (PVDF) piezoelectric transducers and capacitive micromachined transducers (CMUT), high-frequency ultrasound and photoacoustic imaging have been developed rapidly. The HFUS and PA imaging with improved microscopic resolutions opens many new medical imaging applications [2,3,4,5,6,7] in the fields of ophthalmology, dermatology, photoacoustic microscope, intravascular imaging (IVUS), and systemic sclerosis (SSC). In HFUS and PA imaging, ultrasound transducers are utilized to detect the acoustic pressure transients and to generate electrical signals . The electrical signals are processed by the ultrasonic imaging receiver, in which the low-noise amplifier (LNA)
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