Abstract
This paper presents a temperature-insensitive wideband cryogenic amplifier for superconducting nanowire single-photon detectors (SNSPD). With a proposed folded diode-connected transistor load to realize a good device-tracking feature, the theoretical derivations the simulations and test results prove that the amplifier-gain cell has a stable gain performance over a wide temperature range, solving the issues of a lack of the accurate cryogenic device models. The amplifier achieves a gain of 26 dB from 100 kHz to 1 GHz at 4.2 K, consuming only 1.8 mW from a 1.8 V supply. With a 0.13-μm SiGe BiCMOS process, the chip area is 0.5 mm².
Highlights
As key enabling components, superconducting nanowire single-photon detectors (SNSPD) [1,2] play an important role in the applications of high-speed quantum key distribution (QKD) [3,4], light detection and ranging (LIDAR) [5], high-sensitivity bio-medical imaging [6,7,8,9], remote sensing and detection [10].To detect weak electrical SNSPD output signals [11], a readout amplifier with high gain and low noise performance is needed
SNSPDs [1,2] play an important role in the applications of high-speed quantum key distribution (QKD) [3,4], light detection and ranging (LIDAR) [5], high-sensitivity bio-medical imaging [6,7,8,9], remote sensing and detection [10]
As the traditional readout amplifiers have relatively large sizes and high-power consumption, they are difficult to assemble with SNSPDs
Summary
SNSPDs [1,2] play an important role in the applications of high-speed quantum key distribution (QKD) [3,4], light detection and ranging (LIDAR) [5], high-sensitivity bio-medical imaging [6,7,8,9], remote sensing and detection [10]. The traditional radio frequency (RF) amplifiers with topologies such as Doherty and balanced structures exhibit remarkable performance in terms of power efficiency, gain, bandwidth and linearity [12,13], but they are not designed for cryogenic applications. Different from these amplifiers, the cryogenic amplifier prefers higher input impedance, instead of conventional 50 ohm impedance, to obtain higher. 0.5~13 GHz low noise amplifier with a gain of 38~44 dB is presented in [16] This amplifier dissipates a high power consumption of 15 mW, making it difficult to be placed in the cryogenic environment.
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