A wideband cryogenic microwave low-noise amplifier.

Boris I Ivanov,Ilya A Rodionov,Ilya L Novikov,Aleksey G Vostretsov,Dmitri O Moskalev,Evgeni Il’Ichev,Dmitri I Volkhin,Dmitri K Pitsun

doi:10.3762/bjnano.11.131

Abstract

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

Highlights

Quantum microwave devices are widely used for different applications ranging from radio astronomy [1,2,3] to quantum information processing circuits [4]
In this paper we show that an accurate microwave matching circuit design based on commercially available transistors yields low-cost stable cryogenic low-noise amplifiers with a frequency range up to 12 GHz
The amplifier design was optimized for low noise, adequate gain, and appropriate output matching at cryogenic temperatures

Summary

Introduction

Quantum microwave devices are widely used for different applications ranging from radio astronomy [1,2,3] to quantum information processing circuits [4]. In this paper we show that an accurate microwave matching circuit design based on commercially available transistors yields low-cost stable cryogenic low-noise amplifiers with a frequency range up to 12 GHz. The implemented cLNA has the following parameters: a gain value of more than 30 dB for a frequency range from 6 to 12 GHz and an equivalent noise temperature below 6 K.

Results

Conclusion