Abstract
A waterless cleaning method of Cu foil for chemical vapor deposition (CVD) graphene growth is proposed in this work. In our method, the Cu foil is first annealed in high temperature air and then cooled rapidly, contaminated Cu surface layer was oxided in annealing and separated in the following cooling process, so as to get a clean Cu surface, the whole process does not require the participation of water and other reagents. Due to the influence of oxygen, the density of graphene domains on the waterless cleaning substrate is even lower than that on the polished substrate. Waterless cleaning provides a simple, economical and environment friendly.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
