Abstract

AbstractA simple method to grow a closely packed carbon nitride (CN) film by the crystallization of CN monomers on a conductive substrate followed by a thermal condensation is reported. The as‐synthesized CN exhibits excellent performance as photoanode material in a photoelectrochemical cell. Detailed (photo)electrochemical and transient absorption measurements indicate excellent charge separation properties, high hole‐extraction efficiency (up to 50 %), a long electron lifetime, and low amount of defect states below the CN conduction band. Consequently, the CN photoanode exhibits a markedly low overpotential of 0.25 V versus reversible hydrogen electrode (RHE), which is comparable with the state‐of‐the‐art metal‐based photoanodes, an impressive photocurrent density of 116 μA cm−2 at 1.23 V versus RHE in an alkaline solution without sacrificial agent, as well as excellent stability over a wide pH range (0–13).

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