Abstract
A resistor-biased self-electro-optic-effect device in waveguide geometry has been realized with an electroabsorption modulator containing an InGaAs/InP superlattice as the waveguide core. Room-temperature all-optical switching has been experimentally observed over a wide wavelength range between 1.51 and 1.58 µm. Simulation of the device response to time-varying digital optical input signals shows that it is possible to obtain optical logic operation using these devices. Boolean functions such as NAND and NOR can be realized at 1.55 µm and EXOR operation at 1.51 µm at fairly low optical power levels. The functionality is however rather sensitive to optical bias power variations.
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