Abstract
A resistor-biased self-electro-optic-effect device in waveguide geometry has been realized with an electroabsorption modulator containing an InGaAs/InP superlattice as the waveguide core. Room-temperature all-optical switching has been experimentally observed over a wide wavelength range between 1.51 and 1.58 µm. Simulation of the device response to time-varying digital optical input signals shows that it is possible to obtain optical logic operation using these devices. Boolean functions such as NAND and NOR can be realized at 1.55 µm and EXOR operation at 1.51 µm at fairly low optical power levels. The functionality is however rather sensitive to optical bias power variations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
