Abstract

A wafer-scale (scale of an entire foil) AB-stacked bilayer graphene film obtained on a dilute Cu(Ni) foil using AP-CVD.

Highlights

  • Graphene has attracted wide interest due to its promising potential applications in electronics and photonics.[1,2,3] many of these applications are restricted by the zero band gap of graphene.[4,5] a considerable band gap of up to $250 meV can be opened up in Bernal (AB) stacked bilayer graphene by applying a perpendicular electric eld between the two superimposed layers.[5,6,7] graphene synthesis has been focused on growing high-quality and large-area AB-stacked bilayer graphene

  • Atomic force microscopy (AFM) average step height analysis showed the thickness of bilayer graphene, scanning electron microscopy (SEM) micrographs showed uniform and continuous graphene layers and the Raman optical microscopy images and spectroscopy data supported by selected area electron diffraction (SAED) data showed highquality and continuous AB-stacked bilayer graphene for the graphene lm obtained on the dilute Cu (0.61 at% Ni) foil, while bilayer graphene growth on the Cu foil showed bilayer domains on a monolayer graphene background (Fig. S3 and S4 in the ESI†)

  • This study demonstrated the synthesis of a wafer-scale and high-quality AB-stacked bilayer graphene lm on a dilute Cu (0.61 at% Ni) foil using atmospheric pressure chemical vapour deposition (AP-Chemical vapour deposition (CVD))

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Summary

Introduction

Graphene has attracted wide interest due to its promising potential applications in electronics and photonics.[1,2,3] many of these applications are restricted by the zero band gap of graphene.[4,5] a considerable band gap of up to $250 meV can be opened up in Bernal (AB) stacked bilayer graphene by applying a perpendicular electric eld between the two superimposed layers.[5,6,7] graphene synthesis has been focused on growing high-quality and large-area AB-stacked bilayer graphene.

Results
Conclusion
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