Abstract
We developed an 8.5 /spl mu/m/spl times/11.5 /spl mu/m vortex transitional (VT) memory cell. The memory cell is the smallest Josephson memory cell ever reported. The cell was fabricated by electron cyclotron resonance plasma etching and bias-sputtering planarization. This is also the first Josephson circuit fabricated with sub-micron minimum feature size. Proper nondestructive read-out operation was verified even after half-selected conditions. An operating margin of /spl plusmn/14% was obtained for control currents I/sub X/ and I/sub Y/. These results are promising for developing a 1-Mbit/cm/sup 2/ density Josephson RAM.
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