Abstract

As features in VLSI reach submicron sizes, the parasitic interconnect must be calculated even more quickly and accurately. In this paper, we present a virtual 3-D extractor of multiple dielectrics that is very fast. In the indirect boundary integral equations from classical potential theory, we replaced the plane charge distribution on the surfaces of conductors with metal mesh charge distribution to simplify the 3-D structure. We also adopted the multipole acceleration with improved non-uniform cube partitioning to further simplify the computational complexity. Numerical results show that the computational complexity of our algorithm is about O( n).

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