Abstract
Via last Through Silicon Vias (TSVs) can be exploited to build low material modules for the upgrades of the ATLAS pixel detector at the High Luminosity LHC. To prove this concept a via last TSV process is demonstrated on ATLAS pixel readout wafers. Demonstrator modules featuring 90 μm thin readout chips with TSVs are operated using the connection from the back side of the chip. This paper illustrates the via formation process and the results from the characterization of modules with TSVs.
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